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www.irf.com 1 iRFB23N15DPBF irfs23n15d irfsl23n15d hexfet power mosfet high frequency dc-dc converters benefits applications low gate-to-drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current v dss r ds(on) max i d 150v 0.090 ? 23a typical smps topologies telecom 48v input dc-dc active clamp reset forward converter d 2 pak irfs23n15d to-220ab iRFB23N15DPBF to-262 irfsl23n15d parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 23 i d @ t c = 100c continuous drain current, v gs @ 10v 17 a i dm pulsed drain current 92 p d @t a = 25c power dissipation 3.8 w p d @t c = 25c power dissipation 136 linear derating factor 0.9 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 4.1 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torqe, 6-32 or m3 screw 10 lbf?in (1.1n?m) absolute maximum ratings notes through are on page 11 pd - 94926 lead-free (only the to-220ab version is currently available in a lead-free configuration)
iRFB23N15DPBF/irfs/irfsl23n15d 2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 11 ??? ??? s v ds = 25v, i d = 14a q g total gate charge ??? 37 56 i d = 14a q gs gate-to-source charge ??? 9.6 14 nc v ds = 120v q gd gate-to-drain ("miller") charge ??? 19 29 v gs = 10v, t d(on) turn-on delay time ??? 10 ??? v dd = 75v t r rise time ??? 32 ??? i d = 14a t d(off) turn-off delay time ??? 18 ??? r g = 5.1 ? t f fall time ??? 8.4 ??? v gs = 10v c iss input capacitance ??? 1200 ??? v gs = 0v c oss output capacitance ??? 260 ??? v ds = 25v c rss reverse transfer capacitance ??? 65 ??? pf ? = 1.0mhz c oss output capacitance ??? 1520 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 120 ??? v gs = 0v, v ds = 120v, ? = 1.0mhz c oss eff. effective output capacitance ??? 210 ??? v gs = 0v, v ds = 0v to 120v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 260 mj i ar avalanche current ??? 14 a e ar repetitive avalanche energy ??? 13.6 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source curr ent integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 14a, v gs = 0v t rr reverse recovery time ??? 150 220 ns t j = 25c, i f = 14a q rr reverse recoverycharge ??? 0.8 1.2 c di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) diode characteristics 23 92 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 150 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.18 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.090 ? v gs = 10v, i d = 14a v gs(th) gate threshold voltage 3.0 ??? 5.5 v v ds = v gs , i d = 250a ??? ??? 25 a v ds = 150v, v gs = 0v ??? ??? 250 v ds = 120v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 na v gs = -30v i gss i dss drain-to-source leakage current thermal resistance parameter typ. max. units r jc junction-to-case ??? 1.1 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 r ja junction-to-ambient ??? 40
www.irf.com 3 iRFB23N15DPBF/irfs/irfsl23n15d fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 8.0v 7.0v 6.0v 5.5v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 12v 10v 8.0v 7.0v 6.0v 5.5v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 4 5 6 7 8 9 10 11 12 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 23a
iRFB23N15DPBF/irfs/irfsl23n15d 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 0 10 20 30 40 50 60 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 14a v = 30v ds v = 75v ds v = 120v ds 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
www.irf.com 5 iRFB23N15DPBF/irfs/irfsl23n15d fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 5 10 15 20 25 t , case temperature ( c) i , drain current (a) c d
iRFB23N15DPBF/irfs/irfsl23n15d 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 14a 9.8a 5.6a
www.irf.com 7 iRFB23N15DPBF/irfs/irfsl23n15d p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets

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iRFB23N15DPBF/irfs/irfsl23n15d 8 www.irf.com
dimensions are shown in millimeters (inches)
example: in the assembly line "c" t his is an irf1010 lot code 1789 as s e mb le d on ww 19, 1997 part number assembly lot code dat e code year 7 = 1997 line c week 19 logo rect ifier int e rnat ional note: "p" in assembly line position indicates "lead-free" lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copack 1- gate 2- collector 3- emitter 4- collector
www.irf.com 9 iRFB23N15DPBF/irfs/irfsl23n15d 10.16 (.400) ref. 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) ref. - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5.08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) max. notes: 1 dimensions after solder dip. 2 dimensioning & tolerancing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0.25 (.010) m b a m minimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2x lead assignments 1 - gate 2 - drain 3 - source 2.54 (.100) 2x part number international rectifier logo date code (yyww) yy = year ww = week assembly lot code f530s 9b 1m 9246 a
iRFB23N15DPBF/irfs/irfsl23n15d 10 www.irf.com to-262 part marking information to-262 package outline
www.irf.com 11 iRFB23N15DPBF/irfs/irfsl23n15d 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. repetitive rating; pulse width limited by max. junction temperature. i sd 14a, di/dt 240a/s, v dd v (br)dss , t j 175c
starting t j = 25c, l = 2.7mh r g = 25 ? , i as = 14a. pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss this is only applied to to-220ab package this is applied to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/03

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